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SI6423DQ-T1-GE3
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 200 ns |
| Forward Transconductance - Min | 45 S |
| Id - Continuous Drain Current | 9.5 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TSSOP-8 |
| Part # Aliases | SI6423DQ-GE3 |
| Pd - Power Dissipation | 1.5 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 110 nC |
| Rds On - Drain-Source Resistance | 8.5 mOhms |
| Rise Time | 75 ns |
| Series | SI6 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 270 ns |
| Typical Turn-On Delay Time | 50 ns |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
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