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SI7108DN-T1-E3, MOSFET 20V 22A 0.0049Ohm

Semiconductors\Discrete SemiconductorsSi71 MOSFETs Vishay Si71 MOSFETs feature TrenchFET® Gen III Power MOSFET technology in low thermal resistance PowerPAK® 1212-8 and PowerPak SO-8 packages. The MOSFETs are 100% Rg and UIS tested, ensuring reliability and performance. The N- and P-channel MOSFETs are halogen-free under the IEC 61249-2-21 definition. These compact MOSFETs are ideal for applications where space and thermal management are critical.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	10 ns
Forward Transconductance - Min	88 S
Id - Continuous Drain Current	22 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-1212-8
Part # Aliases	SI7108DN-E3
Pd - Power Dissipation	3.8 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	20 nC
Rds On - Drain-Source Resistance	4.9 mOhms
Rise Time	10 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	60 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-16 V, +16 V
Vgs th - Gate-Source Threshold Voltage	2 V