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SI7212DN-T1-GE3, MOSFET 30V Vds 12V Vgs PowerPAK 1212-8

Semiconductors\Discrete SemiconductorsSi72 MOSFETs Vishay Si72 MOSFETs feature TrenchFET® power MOSFET technology for enhanced performance. The Vishay Si72 MOSFETs are Encased in a thermally enhanced PowerPAK® package. The devices ensure efficient heat dissipation and are PWM optimized, providing precise control for various applications. With 100% Rg and UIS testing, the devices' reliability is thoroughly validated.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	10 ns
Forward Transconductance - Min	20 S
Id - Continuous Drain Current	6.8 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	PowerPAK-1212-8
Part # Aliases	SI7212DN-GE3
Pd - Power Dissipation	2.6 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	11 nC
Rds On - Drain-Source Resistance	36 mOhms
Rise Time	12 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage	600 mV