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SI7309DN-T1-GE3

Semiconductors\Discrete SemiconductorsSI73 TrenchFET® Power MOSFETs Vishay Semiconductors SI73 TrenchFET® Power MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. The TrenchFET® Power MOSFETs are 100% Rg/UIS tested and halogen-free. These SI73 power MOSFETs are ideally used in DC/DC converters.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	35 ns
Forward Transconductance - Min	10 S
Id - Continuous Drain Current	8 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-1212-8
Part # Aliases	SI7309DN-GE3
Pd - Power Dissipation	19.8 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	14.5 nC
Rds On - Drain-Source Resistance	146 mOhms
Rise Time	15 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	3 V