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SI7317DN-T1-GE3
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 10 ns |
| Forward Transconductance - Min | 3 S |
| Id - Continuous Drain Current | 2.8 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerPAK-1212-8 |
| Pd - Power Dissipation | 19.8 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 6.5 nC |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| Rise Time | 11 ns |
| Series | SI7 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 7 ns |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
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