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SI7456DP-T1-GE3

Semiconductors\Discrete SemiconductorsTrans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	5.7
Maximum Drain Source Resistance (mOhm)	25@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	5200
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	NRND
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Supplier Package	PowerPAK SO
Typical Fall Time (ns)	26
Typical Gate Charge @ 10V (nC)	36
Typical Gate Charge @ Vgs (nC)	36@10V
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	46
Typical Turn-On Delay Time (ns)	14
Brand	Vishay Semiconductors
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Id - Continuous Drain Current	9.3 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-SO-8
Part # Aliases	SI7456DP-GE3
Pd - Power Dissipation	5.2 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	44 nC
Rds On - Drain-Source Resistance	25 mOhms
Series	SI7
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V