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Цена по запросу
SI7461DP-T1-E3, -60V Vds 20V Vgs PowerPAK SO-8
Semiconductors\Discrete SemiconductorsТранзистор полевой MOSFET P-канальный 60В 8.6A
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 90 ns |
| Forward Transconductance - Min | 31 S |
| Id - Continuous Drain Current | 14.4 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerPAK-SO-8 |
| Part # Aliases | SI7461DP-E3 |
| Pd - Power Dissipation | 5.4 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 121 nC |
| Rds On - Drain-Source Resistance | 14.5 mOhms |
| Rise Time | 20 ns |
| Series | SI7 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 205 ns |
| Typical Turn-On Delay Time | 20 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
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