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SI7461DP-T1-GE3
Semiconductors\Discrete Semiconductors Описание Транзистор P-МОП, полевой, 60В 14,4A 5,4Вт 0,0145Ом PoВтeОмPakSO8
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 90 ns |
| Forward Transconductance - Min | 31 S |
| Id - Continuous Drain Current | 14.4 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerPAK-SO-8 |
| Part # Aliases | SI7461DP-GE3 |
| Pd - Power Dissipation | 5.4 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 121 nC |
| Rds On - Drain-Source Resistance | 14.5 mOhms |
| Rise Time | 20 ns |
| Series | SI7 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 205 ns |
| Typical Turn-On Delay Time | 20 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Continuous Drain Current (Id) | 8.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 14.5mΩ@14.4A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Power Dissipation (Pd) | 1.9W |
| Total Gate Charge (Qg@Vgs) | 190nC@10V |
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