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SI7611DN-T1-GE3, MOSFET -40V Vds 20V Vgs PowerPAK 1212-8

Semiconductors\Discrete SemiconductorsSi76 Series MOSFETs Vishay Semiconductors Si76 Series MOSFETs are TrenchFET® power MOSFETs for low-side switches in DC/DC converters and OR-ings. The P- and N-channel MOSFETs are 100% avalanche and Rg tested. The Vishay Si76 Series MOSFETs offer a wide range of packages and voltages for user requirements.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	12 ns
Forward Transconductance - Min	25 S
Id - Continuous Drain Current	18 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-50 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-1212-8
Part # Aliases	SI7611DN-GE3
Pd - Power Dissipation	39 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	41 nC
Rds On - Drain-Source Resistance	25 mOhms
Rise Time	150 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	28 ns
Typical Turn-On Delay Time	47 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V