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SI7615ADN-T1-GE3

Semiconductors\Discrete Semiconductors Описание Транзистор: P-MOSFET, полевой, -20В, -35А, Idm: -80А, 33Вт Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	35
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	22.1
Maximum Diode Forward Voltage (V)	1.1
Maximum Drain Source Resistance (mOhm)	4.4 10V
Maximum Drain Source Voltage (V)	20
Maximum Gate Resistance (Ohm)	4
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1.5
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	81
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	12
Maximum Power Dissipation (mW)	3700
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.7
Maximum Pulsed Drain Current @ TC=25°C (A)	80
Minimum Gate Resistance (Ohm)	0.4
Minimum Gate Threshold Voltage (V)	0.4
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	PowerPAK 1212
Supplier Package	PowerPAK 1212
Typical Diode Forward Voltage (V)	0.72
Typical Fall Time (ns)	26
Typical Gate Charge @ 10V (nC)	122
Typical Gate Charge @ Vgs (nC)	59 4.5V\|122 10V
Typical Gate Plateau Voltage (V)	1.8
Typical Gate to Drain Charge (nC)	14.2
Typical Gate to Source Charge (nC)	9.1
Typical Input Capacitance @ Vds (pF)	5590 10V
Typical Output Capacitance (pF)	640
Typical Reverse Recovery Charge (nC)	11
Typical Reverse Recovery Time (ns)	27
Typical Reverse Transfer Capacitance @ Vds (pF)	655 10V
Typical Rise Time (ns)	40
Typical Turn-Off Delay Time (ns)	75
Typical Turn-On Delay Time (ns)	41
Maximum Continuous Drain Current	35 A
Maximum Drain Source Resistance	9.8 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	52 W
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	PowerPAK 1212-8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	122 nC @ 10 V
Width	3.4mm
Continuous Drain Current (Id)	35A
Drain Source On Resistance (RDS(on)@Vgs,Id)	4.4mΩ@20A, 10V
Drain Source Voltage (Vdss)	20V
Gate Threshold Voltage (Vgs(th)@Id)	1.5V@250uA
Input Capacitance (Ciss@Vds)	5.59nF@10V
Power Dissipation (Pd)	3.7W;52W
Total Gate Charge (Qg@Vgs)	183nC@10V