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SI7633DP-T1-GE3
Semiconductors\Discrete SemiconductorsSi76 Series MOSFETs Vishay Semiconductors Si76 Series MOSFETs are TrenchFET® power MOSFETs for low-side switches in DC/DC converters and OR-ings. The P- and N-channel MOSFETs are 100% avalanche and Rg tested. The Vishay Si76 Series MOSFETs offer a wide range of packages and voltages for user requirements.
Brand | Vishay Semiconductors |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 25 ns |
Forward Transconductance - Min | 80 S |
Id - Continuous Drain Current | 60 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | PowerPAK-SO-8 |
Part # Aliases | SI7633DP-GE3 |
Pd - Power Dissipation | 104 W |
Product Category | MOSFETs |
Product Type | MOSFETs |
Qg - Gate Charge | 260 nC |
Rds On - Drain-Source Resistance | 5.5 mOhms |
Rise Time | 12 ns |
Subcategory | Transistors |
Technology | Si |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 100 ns |
Typical Turn-On Delay Time | 21 ns |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |