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SI7848BDP-T1-GE3
Semiconductors\Discrete SemiconductorsSI78 N-Channel (D-S) MOSFETs Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% Rg tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.
Brand | Vishay Semiconductors |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 10 ns |
Forward Transconductance - Min | 56 S |
Id - Continuous Drain Current | 47 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package/Case | PowerPAK-SO-8 |
Part # Aliases | SI7848BDP-GE3 |
Pd - Power Dissipation | 36 W |
Product Category | MOSFETs |
Product Type | MOSFETs |
Qg - Gate Charge | 33 nC |
Rds On - Drain-Source Resistance | 9 mOhms |
Rise Time | 12 ns |
Subcategory | Transistors |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N Channel |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 25 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |