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SI7850DP-T1-E3, MOSFET 60V Vds 20V Vgs PowerPAK SO-8

Semiconductors\Discrete SemiconductorsSI78 N-Channel (D-S) MOSFETs Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% Rg tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.

кол-во в упаковке	1
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	12 ns
Forward Transconductance - Min	26 S
Id - Continuous Drain Current	6.2 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-SO-8
Part # Aliases	SI7850DP-E3
Pd - Power Dissipation	1.8 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	18 nC
Rds On - Drain-Source Resistance	22 Ohms
Rise Time	10 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Type	N
Maximum Continuous Drain Current	6.2 A
Maximum Drain Source Resistance	22 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.8 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PowerPAK SO-8
Pin Count	8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	18 nC @ 10 V
Width	5.89mm