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SI7852ADP-T1-E3, MOSFETs 80V 30A 62.5W 17mohm @ 10V
SI78 N-Channel (D-S) MOSFETs Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% Rg tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 25 S |
| Id - Continuous Drain Current | 30 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | PowerPAK-SO-8 |
| Part # Aliases | SI7852ADP-E3 |
| Pd - Power Dissipation | 62.5 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 30.5 nC |
| Rds On - Drain-Source Resistance | 17 mOhms |
| Rise Time | 9 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 12 ns |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Вес, г | 0.51 |
