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мелкий и крупный опт
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Цена по запросу
SI7923DN-T1-GE3, MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Fall Time | 28 ns |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 6.4 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package/Case | PowerPAK-1212-8 |
| Part # Aliases | SI7923DN-GE3 |
| Pd - Power Dissipation | 2.8 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 47 mOhms |
| Rise Time | 12 ns |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
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