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SI7938DP-T1-GE3

Semiconductors\Discrete SemiconductorsSi79 MOSFETs Vishay Si79 MOSFETs feature advanced ThunderFET® technology to balance parameters like RDS(on), Qg, Qsw, and Qoss. These Vishay MOSFETs are rigorously tested, ensuring 100% reliability through extensive Rg and UIS testing. The devices' design is PWM optimized, facilitating fast switching performance. Encased in a Low Thermal Resistance PowerPAK® package, the Si79 MOSFETS demonstrate efficient heat dissipation. Additionally, these MOSFETs feature a high threshold voltage at high temperatures, enhancing stability. Including a dual MOSFET configuration contributes to space savings, making the Si79 an ideal choice for applications where size is critical.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	15 ns
Forward Transconductance - Min	105 S
Id - Continuous Drain Current	60 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	PowerPAK-SO-8
Part # Aliases	SI7938DP-GE3
Pd - Power Dissipation	46 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	65 nC
Rds On - Drain-Source Resistance	5.8 mOhms
Rise Time	19 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V