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SI8425DB-T1-E1, MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6

Semiconductors\Discrete SemiconductorsMicroFoot® Power MOSFETs Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Id - Continuous Drain Current	9.3 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	MicroFoot-4
Pd - Power Dissipation	2.7 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	110 nC
Rds On - Drain-Source Resistance	40 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage	900 mV