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SI8472DB-T2-E1, 20V Vds 8V Vgs MICRO FOOT 1 x 1
Semiconductors\Discrete SemiconductorsMicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R DS(on) ) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Configuration | Single Dual Source |
| Process Technology | TrenchFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Continuous Drain Current (A) | 3.3 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 44@4.5V |
| Typical Gate Charge @ Vgs (nC) | 6.8@4.5V|12@8V |
| Maximum Power Dissipation (mW) | 780 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Typical Turn-On Delay Time (ns) | 7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | BGA |
| Supplier Package | Micro Foot |
| Pin Count | 4 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.26 |
| Package Length | 0.96 |
| Package Width | 0.96 |
| PCB changed | 4 |
| Brand | Vishay Semiconductors |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 4.5 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | MicroFoot-4 |
| Pd - Power Dissipation | 1.8 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 18 nC |
| Rds On - Drain-Source Resistance | 44 mOhms |
| Series | SI8 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Continuous Drain Current (Id) | 3.3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 44mΩ@4.5V, 1.5A |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 900mV@250uA |
| Input Capacitance (Ciss@Vds) | 630pF@10V |
| Power Dissipation (Pd) | 780mW |
| Total Gate Charge (Qg@Vgs) | 18nC@8V |
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