Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
SI8808DB-T2-E1
Semiconductors\Discrete SemiconductorsMicroFoot® Power MOSFETs Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.
Brand | Vishay Semiconductors |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Id - Continuous Drain Current | 2.5 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package/Case | MicroFoot-4 |
Pd - Power Dissipation | 900 mW |
Product Category | MOSFETs |
Product Type | MOSFETs |
Qg - Gate Charge | 10 nC |
Rds On - Drain-Source Resistance | 95 mOhms |
Subcategory | Transistors |
Technology | Si |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage | 400 mV |