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Цена по запросу
SI9435BDY-T1-E3, MOSFET 30V 5.7A 0.042Ohm
Semiconductors\Discrete SemiconductorsTrans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2500 |
| Fall Time | 30 ns |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 5.7 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOIC-8 |
| Part # Aliases | SI9435BDY-E3 |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 24 nC |
| Rds On - Drain-Source Resistance | 42 mOhms |
| Rise Time | 42 ns |
| Series | SI9 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 14 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Automotive | No |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4.1 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.7 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 42@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 95 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 30 |
| Typical Gate Charge @ 10V (nC) | 16 |
| Typical Gate Charge @ Vgs (nC) | 16@10V |
| Typical Gate Plateau Voltage (V) | 3.2 |
| Typical Gate to Drain Charge (nC) | 4.5 |
| Typical Gate to Source Charge (nC) | 2.3 |
| Typical Output Capacitance (pF) | 175 |
| Typical Reverse Recovery Time (ns) | 30 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 42 |
| Typical Turn-On Delay Time (ns) | 14 |
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