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SIA416DJ-T1-GE3, MOSFET 100V Vds 20V Vgs PowerPAK SC-70

Semiconductors\Discrete SemiconductorsThunderFET® Power MOSFETs Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	10 ns
Forward Transconductance - Min	8 S
Id - Continuous Drain Current	11.3 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SC-70-6
Pd - Power Dissipation	19 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	10 nC
Rds On - Drain-Source Resistance	68 mOhms
Rise Time	13 ns
Series	SIA
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	5 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.6 V