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SIA436DJ-T1-GE3

Semiconductors\Discrete SemiconductorsSIA436DJ N-Channel 8V TrenchFET® MOSFET Vishay / Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in a compact PowerPAK SC-70 package to save PCB space in portable electronics. This MOSFET comes with on-resistance values that are 18% lower than previous generation solutions and up to 64% lower than the closest competing N-channel device in a 2mm x 2mm footprint area. This ultra-low on-resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent an unwanted undervoltage lockout. Vishay / Siliconix SiA436DJ on-resistance ratings are down to 1.2V, which simplifies circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	8 ns
Forward Transconductance - Min	70 S
Id - Continuous Drain Current	12 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SC-70-6
Part # Aliases	SIA436DJ-GE3
Pd - Power Dissipation	19 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	15 nC
Rds On - Drain-Source Resistance	9.4 mOhms
Rise Time	10 ns
Series	SIA
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	11 ns
Vds - Drain-Source Breakdown Voltage	8 V
Vgs - Gate-Source Voltage	-5 V, +5 V
Vgs th - Gate-Source Threshold Voltage	350 mV
Automotive	No
Channel Type	N
Configuration	Single Quad Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	12
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	12
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	9.4@4.5V
Maximum Drain Source Voltage (V)	8
Maximum Gate Resistance (Ohm)	5
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±5
Maximum Gate Threshold Voltage (V)	0.8
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	80
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	5
Maximum Power Dissipation (mW)	3500
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.5
Maximum Pulsed Drain Current @ TC=25°C (A)	50
Minimum Gate Resistance (Ohm)	0.5
Minimum Gate Threshold Voltage (V)	0.35
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Supplier Package	PowerPAK SC-70 EP
Typical Diode Forward Voltage (V)	0.73
Typical Fall Time (ns)	8
Typical Gate Charge @ Vgs (nC)	16.8@5V\|15@4.5V
Typical Gate Plateau Voltage (V)	0.9
Typical Gate to Drain Charge (nC)	0.9
Typical Gate to Source Charge (nC)	1.7
Typical Input Capacitance @ Vds (pF)	1508@4V
Typical Output Capacitance (pF)	535
Typical Reverse Recovery Charge (nC)	1
Typical Reverse Recovery Time (ns)	10
Typical Reverse Transfer Capacitance @ Vds (pF)	321@4V
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	30
Typical Turn-On Delay Time (ns)	11