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Цена по запросу
SIA456DJ-T1-GE3 IGBT
Semiconductors\Discrete Semiconductors\IGBTs Описание Транзистор: N-MOSFET; полевой; 200В; 2,6А; Idm: 2А; 12Вт
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| ECCN (US) | EAR99 |
| EDA / CAD Models | SIA456DJ-T1-GE3 by Ultra Librarian |
| EU RoHS | Compliant |
| HTS | 8541.10.00.80 |
| Maximum Continuous Drain Current (A) | 2.6 |
| Maximum Drain Source Resistance (MOhm) | 1380@4.5V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Height | 0.75 |
| Package Length | 2.05 |
| Package Width | 2.05 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-70 |
| Typical Fall Time (ns) | 20|12 |
| Typical Gate Charge @ 10V (nC) | 9.5 |
| Typical Gate Charge @ Vgs (nC) | 9.5@10V|5@4.5V |
| Typical Input Capacitance @ Vds (pF) | 350@100V |
| Typical Rise Time (ns) | 25|20 |
| Typical Turn-Off Delay Time (ns) | 30|16 |
| Typical Turn-On Delay Time (ns) | 5|10 |
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