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SIA527DJ-T1-GE3

Semiconductors\Discrete SemiconductorsIntegrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Continuous Drain Current (Id)	4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)	29mΩ@4.5V, 5A
Drain Source Voltage (Vdss)	12V
Gate Threshold Voltage (Vgs(th)@Id)	1V@250uA
Power Dissipation (Pd)	7.8W
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	10 ns, 15 ns
Forward Transconductance - Min	21 S, 12 S
Id - Continuous Drain Current	4.5 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	SC-70-6
Pd - Power Dissipation	7.8 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	15 nC, 26 nC
Rds On - Drain-Source Resistance	29 mOhms, 41 mOhms
Rise Time	10 ns, 22 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	22 ns, 32 ns
Typical Turn-On Delay Time	10 ns, 22 ns
Vds - Drain-Source Breakdown Voltage	12 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	400 mV