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SIA975DJ-T1-GE3

Semiconductors\Discrete SemiconductorsTrenchFET® MOSFETs Vishay / Siliconix TrenchFET ® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK ® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	15 ns, 15 ns
Forward Transconductance - Min	12 S, 12 S
Id - Continuous Drain Current	4.5 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	SC-70-6
Part # Aliases	SIA975DJ-GE3
Pd - Power Dissipation	7.8 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	26 nC
Rds On - Drain-Source Resistance	33 mOhms, 33 mOhms
Rise Time	22 ns, 22 ns
Series	SIA
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	P-Channel
Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	32 ns, 32 ns
Typical Turn-On Delay Time	22 ns, 22 ns
Vds - Drain-Source Breakdown Voltage	12 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	1 V