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SIHA180N60E-GE3, MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Semiconductors\Discrete SemiconductorsE Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	23 ns
Forward Transconductance - Min	5.3 S
Id - Continuous Drain Current	19 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package/Case	TO-220-3
Pd - Power Dissipation	33 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	33 nC
Rds On - Drain-Source Resistance	180 mOhms
Rise Time	49 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel E-Series Power MOSFET
Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	14 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage	3 V