Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

SIHB22N60E-GE3, MOSFET 600V Vds 30V Vgs D2PAK (TO-263)

Semiconductors\Discrete SemiconductorsE Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Id - Continuous Drain Current	21 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	D2PAK-3(TO-263-3)
Packaging	Tube
Pd - Power Dissipation	227 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	57 nC
Rds On - Drain-Source Resistance	180 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage	4 V