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SIHG22N60E-GE3, MOSFET 600V Vds 30V Vgs TO-247AC

Semiconductors\Discrete SemiconductorsE Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	500
Fall Time	35 ns
Id - Continuous Drain Current	21 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package/Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	227 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	57 nC
Rds On - Drain-Source Resistance	180 mOhms
Rise Time	27 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	66 ns
Typical Turn-On Delay Time	18 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Type	N Channel
Continuous Drain Current Id	21A
Drain Source On State Resistance	0.15ohm
Drain Source Voltage Vds	600V
Gate Source Threshold Voltage Max	2V
MSL	MSL 1-Unlimited
No. of Pins	3Pins
Operating Temperature Max	150°C
Power Dissipation	227W
Rds(on) Test Voltage	10V
Transistor Case Style	TO-247AC
Transistor Mounting	Through Hole