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SIHP12N60E-BE3

Semiconductors\Discrete SemiconductorsE Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (R DS(ON) ), low input capacitance (C iss ), reduced capacitive switching losses, and ultra-low gate charge (Q g ). E series MOSFETs are available in 800V DS high-voltage variants with drain current (I D ) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Brand	Vishay
Channel Mode	Enhancement
Factory Pack Quantity: Factory Pack Quantity	1000
Fall Time	19 ns
Id - Continuous Drain Current	12 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220AB-3
Packaging	Tube
Part # Aliases	SIHP12N60E-GE3 SIHP12N60E-E3
Pd - Power Dissipation	147 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	29 nC
Rds On - Drain-Source Resistance	380 mOhms
Rise Time	19 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	14 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage	4 V