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SIR414DP-T1-GE3

Semiconductors\Discrete SemiconductorsTrenchFET® Gen III Power MOSFETs Vishay Semiconductor TrenchFET ® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK ® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	9 ns
Forward Transconductance - Min	102 S
Id - Continuous Drain Current	50 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-SO-8
Part # Aliases	SIR414DP-GE3
Pd - Power Dissipation	83 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	117 nC
Rds On - Drain-Source Resistance	2.3 mOhms
Rise Time	9 ns
Series	SIR
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	41 ns
Typical Turn-On Delay Time	14 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V