Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

Заказать в 1 клик

SIR422DP-T1-GE3, 40V Vds 20V Vgs PowerPAK SO-8

Semiconductors\Discrete Semiconductors Описание Транзистор N-МОП, полевой, 40В 40A 5,0Вт 0,0066Ом PoВтeОмPakSO8

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	11 ns
Forward Transconductance - Min	70 S
Id - Continuous Drain Current	20.5 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-SO-8
Part # Aliases	SIR422DP-GE3
Pd - Power Dissipation	34.7 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	48 nC
Rds On - Drain-Source Resistance	6.6 mOhms
Rise Time	84 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	28 ns
Typical Turn-On Delay Time	19 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Current - Continuous Drain (Id) @ 25°C	40A(Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1785 pF @ 20 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C(TJ)
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5W(Ta), 34.7W(Tc)
Rds On (Max) @ Id, Vgs	6.6mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA