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SIR460DP-T1-GE3, MOSFET 30V Vds 20V Vgs PowerPAK SO-8

Semiconductors\Discrete SemiconductorsTrenchFET® Gen III Power MOSFETs Vishay Semiconductor TrenchFET® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Id - Continuous Drain Current	40 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-SO-8
Part # Aliases	SIR460DP-GE3
Pd - Power Dissipation	48 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	54 nC
Rds On - Drain-Source Resistance	4.7 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Continuous Drain Current (Id)	40A
Drain Source On Resistance (RDS(on)@Vgs,Id)	4.7mΩ@15A, 10V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	2.4V@250uA
Input Capacitance (Ciss@Vds)	2.071nF@15V
Power Dissipation (Pd)	5W;48W
Total Gate Charge (Qg@Vgs)	54nC@10V