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SIR626DP-T1-RE3, MOSFET 60V Vds 20V Vgs PowerPAK SO-8

Semiconductors\Discrete SemiconductorsMOSFET, N-CH, 60V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.

Current - Continuous Drain (Id) @ 25В°C	100A(Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	78nC @ 7.5V
Input Capacitance (Ciss) (Max) @ Vds	5130pF @ 30V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	PowerPAKВ® SO-8
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	104W(Tc)
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Series	TrenchFETВ® Gen IV
Supplier Device Package	PowerPAKВ® SO-8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3.4V @ 250ВµA
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	12 ns
Forward Transconductance - Min	78 S
Id - Continuous Drain Current	100 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-SO-8
Pd - Power Dissipation	104 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	102 nC
Rds On - Drain-Source Resistance	1.4 mOhms
Rise Time	25 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	19 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V