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SIR870DP-T1-GE3, MOSFET N-CHANNEL 100-V(D-S)

Semiconductors\Discrete SemiconductorsSiR870DP 100V N-Channel TrenchFET® Power MOSFET Vishay / Siliconix SiR870DP 100V N-channel TrenchFET ® Power MOSFET utilizes ThunderFET technology to provide a low on-resistance of 7.8mΩ at 4.5V. Additionally, the SiR870DP also offers a very low on-resistance of 6mΩ at 10V. These Vishay / Siliconix ThunderFET devices also provide a low 208 mΩ-nC figure of merit (FOM) at 4.5V. This low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET Power MOSFETs are designed for higher frequency and switching applications.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	8 ns
Forward Transconductance - Min	80 S
Id - Continuous Drain Current	60 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-SO-8
Part # Aliases	SIR870DP-GE3
Pd - Power Dissipation	104 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	84 nC
Rds On - Drain-Source Resistance	5 mOhms
Rise Time	10 ns
Series	SIR
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	12 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V