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SIR880BDP-T1-RE3

Semiconductors\Discrete SemiconductorsThe Vishay TrenchFET N-channel is 80 V MOSFET. 100 % Rg and UIS tested

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	70.6 A
Maximum Drain Source Resistance	0.0065 Ω
Maximum Drain Source Voltage	80 V
Maximum Gate Threshold Voltage	2.4V
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	PowerPAK SO-8
Pin Count	8
Series	TrenchFET
Transistor Material	Si
Brand	Vishay/Siliconix
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	24 ns
Id - Continuous Drain Current	70.6 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK SO-8-8
Pd - Power Dissipation	71.4 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	66 nC
Rds On - Drain-Source Resistance	8 mOhms
Rise Time	146 ns
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	78 ns
Typical Turn-On Delay Time	56 ns
Vds - Drain-Source Breakdown Voltage	80 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.4 V
Current - Continuous Drain (Id) @ 25°C	18.6A(Ta), 70.6A(Tc)
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2930 pF @ 40 V
Operating Temperature	-55°C ~ 150°C(TJ)
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5W(Ta), 71.4W(Tc)
Rds On (Max) @ Id, Vgs	6.5mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 250µA