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мелкий и крупный опт
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Цена по запросу
SIRA20DP-T1-RE3
Semiconductors\Discrete SemiconductorsMOSFET, N-CH, 25V, 100A, POWERPAK SO, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:25V, On Resistance Rds(on):0.00048ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.1V , RoHS Compliant: Yes
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerPAK-SO-8 |
| Pd - Power Dissipation | 104 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 200 nC |
| Rds On - Drain-Source Resistance | 580 uOhms |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vgs - Gate-Source Voltage | -12 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
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