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SIRA99DP-T1-GE3, MOSFET 30V P-CHANNEL (D-S)

Semiconductors\Discrete SemiconductorsSiRA99DP 30V P-Channel MOSFET Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is a TrenchFET ® Gen IV power MOSFET. The SiRA99DP MOSFET offers low on-resistance that minimizes voltage drop and reduces conduction loss. This SiRA99DP MOSFET operates at a temperature range of -55 C to 150 C. The power MOSFET is available in a single configuration PowerPAK ® SO-8 package. Typical applications include load switch, adapter and charger switch, battery protection, and motor drive control.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	57 ns
Forward Transconductance - Min	114 S
Id - Continuous Drain Current	195 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-SO-8
Pd - Power Dissipation	104 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	172.5 nC
Rds On - Drain-Source Resistance	1.7 mOhms
Rise Time	183 ns
Subcategory	MOSFETs
Technology	Si
Tradename	PowerPAK
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	64 ns
Typical Turn-On Delay Time	69 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +16 V
Vgs th - Gate-Source Threshold Voltage	1 V
Channel Type	P
Forward Diode Voltage	1.1V
Maximum Continuous Drain Current	195 A
Maximum Drain Source Resistance	2.6 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +16 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	104 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PowerPAK SO-8
Pin Count	8
Transistor Configuration	Single
Typical Gate Charge @ Vgs	172.5 nC @ 10 V
Width	5mm