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SIS410DN-T1-GE3, MOSFET 20V Vds 20V Vgs PowerPAK 1212-8

Semiconductors\Discrete SemiconductorsTrenchFET® Gen III Power MOSFETs Vishay Semiconductor TrenchFET® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Id - Continuous Drain Current	35 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-1212-8
Part # Aliases	SIS410DN-GE3
Pd - Power Dissipation	52 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	41 nC
Rds On - Drain-Source Resistance	4.8 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V