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SIS413DN-T1-GE3, MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
Semiconductors\Discrete SemiconductorsРешения для промышленного электропитания
Vishay предлагает один из самых широких в отрасли наборов полупроводниковых и пассивных компонентов для промышленных источников питания. Ассортимент продукции Vishay для промышленных источников питания включает силовые МОП-транзисторы, силовые ИС, выпрямители, диоды, конденсаторы, резисторы и катушки индуктивности.
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 50 S |
| Id - Continuous Drain Current | 18 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerPAK-1212-8 |
| Pd - Power Dissipation | 52 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 73 nC |
| Rds On - Drain-Source Resistance | 9.4 mOhms |
| Rise Time | 11 ns, 82 ns |
| Series | SIS |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET, PowerPAK |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 40 ns, 45 ns |
| Typical Turn-On Delay Time | 11 ns, 55 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Automotive | No |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EDA / CAD Models | SIS413DN-T1-GE3 by Ultra Librarian |
| EU RoHS | Compliant |
| HTS | COMPONENTS |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 18 |
| Maximum Drain Source Resistance (MOhm) | 9.4@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3700 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| Package Width | 3.05 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | PowerPAK 1212 |
| Supplier Package | PowerPAK 1212 |
| Typical Fall Time (ns) | 8|13 |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V|35.4@4.5V |
| Typical Input Capacitance @ Vds (pF) | 4280@15V |
| Typical Rise Time (ns) | 11|82 |
| Typical Turn-Off Delay Time (ns) | 45|42 |
| Typical Turn-On Delay Time (ns) | 11|55 |
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