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SIS782DN-T1-GE3, 30V Vds 20V Vgs PowerPAK 1212-8

Semiconductors\Discrete SemiconductorsIntegrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	11 ns
Forward Transconductance - Min	43 S
Id - Continuous Drain Current	16 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-50 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-1212-8
Part # Aliases	SIS782DN-GE3
Pd - Power Dissipation	41 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	30.5 nC
Rds On - Drain-Source Resistance	9.5 mOhms
Rise Time	22 ns
Series	SIS
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	11 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V