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SISA72ADN-T1-GE3, MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8

Semiconductors\Discrete SemiconductorsTrenchFET® Gen IV MOSFETs Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	5 ns
Forward Transconductance - Min	76 S
Id - Continuous Drain Current	94 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK1212-8
Pd - Power Dissipation	52 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	50 nC
Rds On - Drain-Source Resistance	3.25 mOhms
Rise Time	7 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	15 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-16 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V