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SISH407DN-T1-GE3, MOSFET -20V Vds; +/-8V Vgs PowerPAK 1212-8SH

Semiconductors\Discrete SemiconductorsTrenchFET® Gen IV MOSFETs Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	38 ns
Forward Transconductance - Min	60 S
Id - Continuous Drain Current	25 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	PowerPAK-1212-8SH-8
Pd - Power Dissipation	33 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	93.8 nC
Rds On - Drain-Source Resistance	9.5 mOhms
Rise Time	28 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	92 ns
Typical Turn-On Delay Time	23 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	1 V