Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SISS23DN-T1-GE3, MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
Semiconductors\Discrete Semiconductors
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Resistance | 11.5 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 57 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK 1212-8 |
| Pin Count | 8 |
| Series | TrenchFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V |
| Width | 3.3mm |
| Continuous Drain Current (Id) | 50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.5mΩ@4.5V, 20A |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 900mV@250uA |
| Power Dissipation (Pd) | 57W |
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