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SISS27ADN-T1-GE3, -30V Vds 20V Vgs PowerPAK 1212-8S

Semiconductors\Discrete SemiconductorsTrenchFET® MOSFETs Vishay / Siliconix TrenchFET ® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK ® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	22 ns
Forward Transconductance - Min	57 S
Id - Continuous Drain Current	50 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-1212-8
Pd - Power Dissipation	57 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	117 nC
Rds On - Drain-Source Resistance	4.2 mOhms
Rise Time	35 ns
Series	SIS
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	48 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V