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SIUD402ED-T1-GE3

Semiconductors\Discrete SemiconductorsTrenchFET® Gen IV MOSFETs Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	7 ns
Forward Transconductance - Min	1.2 S
Id - Continuous Drain Current	1 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-0806-3
Pd - Power Dissipation	1.25 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	750 pC
Rds On - Drain-Source Resistance	730 mOhms
Rise Time	10 ns
Series	SIU
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET, PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	7 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	400 mV