Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

Заказать в 1 клик

SIUD403ED-T1-GE3, MOSFET -20V Vds 8V Vgs PowerPAK 0806

Semiconductors\Discrete SemiconductorsP-Channel 20V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAKВ® 0806

Base Product Number	SIUD40 ->
Current - Continuous Drain (Id) @ 25В°C	500mA (Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	31pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	PowerPAKВ® 0806
Power Dissipation (Max)	1.25W (Ta)
Rds On (Max) @ Id, Vgs	1.25Ohm @ 300mA, 4.5V
RoHS Status	ROHS3 Compliant
Series	TrenchFETВ® Gen III ->
Supplier Device Package	PowerPAKВ® 0806
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	900mV @ 250ВµA
Continuous Drain Current (Id)	500mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	1.25Ω@10V, 3A
Drain Source Voltage (Vdss)	20V
Gate Threshold Voltage (Vgs(th)@Id)	900mV@250uA
Power Dissipation (Pd)	1.25W