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Цена по запросу
SKM200GB125D Dual Half Bridge IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS3, Panel Mount
Semiconductors\Discrete Semiconductors\IGBTs Описание Полумост БТИЗ, URmax 1,2кВ, Ic 160А, Ifsм 300А, SEмITrans3, В D56 Характеристики
Категория
Транзистор
Тип
БТИЗ
Вид
IGBT
| Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
| Channel Type | N |
| Configuration | Dual Half Bridge |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 200 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Panel Mount |
| Package Type | SEMITRANS3 |
| Pin Count | 3 |
| Transistor Configuration | Series |
| Application | frequency changer, Inverter |
| Case | SEMITRANS3 |
| Collector current | 160A |
| Electrical mounting | FASTON connectors, screw |
| Gate-emitter voltage | ±20V |
| Manufacturer | SEMIKRON DANFOSS |
| Max. off-state voltage | 1.2kV |
| Mechanical mounting | screw |
| Pulsed collector current | 300A |
| Semiconductor structure | transistor/transistor |
| Topology | IGBT half-bridge |
| Type of module | IGBT |
| Version | D56 |
| Вес, г | 322.7 |
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