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SQ2301ES-T1-BE3

Semiconductors\Discrete SemiconductorsP-канал 20V 3.9A (Tc) 3W (Tc) Поверхностный монтаж SOT-23-3 (TO-236)

Current - Continuous Drain (Id) @ 25В°C	3.9A (Tc)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	3W (Tc)
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Series	Automotive, AEC-Q101, TrenchFETВ® ->
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	1.5V @ 250ВµA
Brand	Vishay/Siliconix
Channel Mode	Enhancement
Factory Pack Quantity	3000
Fall Time	9 ns
Id - Continuous Drain Current	3.9 A
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Part # Aliases	SQ2301ES-T1_GE3
Pd - Power Dissipation	3 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	5 nC
Rds On - Drain-Source Resistance	120 mOhms
Rise Time	14 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	15 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	1.5 V