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SQ2318AES-T1-GE3, RECOMMENDED ALT 78-S Q2318AES-T1GE3
Semiconductors\Discrete SemiconductorsThe Vishay Siliconix SQ2318AES series TrenchFET automotive N channel power MOSFET has drain to source voltage of 40 V.
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Resistance | 0.036 O |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Series | TrenchFET |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Case | SOT23 |
| Drain current | 4.6A |
| Drain-source voltage | 40V |
| Gate charge | 8.7nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 31mΩ |
| Polarisation | unipolar |
| Power dissipation | 1W |
| Type of transistor | N-MOSFET |
| Continuous Drain Current (Id) | 8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 31mΩ@10V, 6A |
| Drain Source Voltage (Vdss) | 40V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Input Capacitance (Ciss@Vds) | 555pF@10V |
| Power Dissipation (Pd) | 3W |
| Total Gate Charge (Qg@Vgs) | 13nC@10V |
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