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Цена по запросу
SQ2348ES-T1-BE3
Semiconductors\Discrete SemiconductorsMount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. Of Pins:3Pinsrohs Compliant: Yes |Vishay SQ2348ES-T1_BE3
| Brand | Vishay/Siliconix |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 3000 |
| Fall Time | 6 ns |
| Id - Continuous Drain Current | 8 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | SOT-23-3 |
| Part # Aliases | SQ2348ES-T1_GE3 |
| Pd - Power Dissipation | 3 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 7.95 nC |
| Rds On - Drain-Source Resistance | 24 mOhms |
| Rise Time | 8 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 4.5 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
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